N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
Power88
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
8mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
8mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Philippines
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 4,13
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 5,121
Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
€ 4,13
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 5,121
Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 10 - 90 | € 4,13 | € 41,30 |
| 100 - 240 | € 3,33 | € 33,30 |
| 250 - 490 | € 3,28 | € 32,80 |
| 500 - 990 | € 3,25 | € 32,50 |
| 1000+ | € 3,23 | € 32,30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
Power88
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
8mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
8mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Philippines
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products