Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.56mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
1.6mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 1.600,00
€ 0,40 Μονάδας (Σε ένα καρούλι των 4000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.984,00
€ 0,496 Μονάδας (Σε ένα καρούλι των 4000) Με Φ.Π.Α
4000
€ 1.600,00
€ 0,40 Μονάδας (Σε ένα καρούλι των 4000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.984,00
€ 0,496 Μονάδας (Σε ένα καρούλι των 4000) Με Φ.Π.Α
4000
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.56mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
1.6mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.