Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 onsemi NTJD4401NT1G

Κωδικός Προϊόντος της RS: 184-1064Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTJD4401NT1G
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

910 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-88

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

550 mW

Maximum Gate Source Voltage

±12 V

Width

1.35mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.3 nC @ 4.5 V

Length

2.2mm

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,13

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,161

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 onsemi NTJD4401NT1G

€ 0,13

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,161

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 onsemi NTJD4401NT1G
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

910 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-88

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

550 mW

Maximum Gate Source Voltage

±12 V

Width

1.35mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.3 nC @ 4.5 V

Length

2.2mm

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more