onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G

Κωδικός Προϊόντος της RS: 172-3371Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NVMFD5C470NLT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

40 V

Series

NVMFD5C470NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

5.1mm

Length

6.1mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

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€ 37,75

€ 1,51 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 46,81

€ 1,872 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α

onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G
Επιλέγξτε συσκευασία

€ 37,75

€ 1,51 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 46,81

€ 1,872 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α

onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
25 - 75€ 1,51€ 37,75
100 - 225€ 1,31€ 32,75
250+€ 1,15€ 28,75

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

40 V

Series

NVMFD5C470NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

5.1mm

Length

6.1mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more