Τεχνικό φυλλάδιο
Προδιαγραφές
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
Si
Channel Type
P
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Surface Mount
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
2.6V
Maximum Drain Source Voltage
75 V
Height
4.5mm
Length
10mm
Maximum Power Dissipation
90 W
Width
9.2mm
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
11 mΩ
Batteries
3 x AAA BatteryPackage Type
D2PAK (TO-263)
Typical Gate Charge @ Vgs
280 nC @ 10 V
Χώρα Προέλευσης
Korea, Republic Of
Λεπτομέρειες Προϊόντος
Bodo Ehmann Aluminium 4 Way Type F German Schuko Socket Strip with 2 USB Outlets
Bodo Ehmann NPI
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
P.O.A.
800
![sticker-730](https://cms.rsdelivers.com/repository-v1/Greece Label 3.jpg)
P.O.A.
800
![sticker-730](https://cms.rsdelivers.com/repository-v1/Greece Label 3.jpg)
Τεχνικό φυλλάδιο
Προδιαγραφές
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
Si
Channel Type
P
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Surface Mount
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
2.6V
Maximum Drain Source Voltage
75 V
Height
4.5mm
Length
10mm
Maximum Power Dissipation
90 W
Width
9.2mm
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
11 mΩ
Batteries
3 x AAA BatteryPackage Type
D2PAK (TO-263)
Typical Gate Charge @ Vgs
280 nC @ 10 V
Χώρα Προέλευσης
Korea, Republic Of
Λεπτομέρειες Προϊόντος