Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1875 W
Number of Elements per Chip
2
Width
57.95mm
Length
152mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Height
17mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
MOSFET Transistors, ROHM Semiconductor
€ 5.351,12
€ 1.337,78 Each (In a Tray of 4) (Exc. Vat)Χωρίς Φ.Π.Α
€ 6.635,39
€ 1.658,847 Each (In a Tray of 4) Με Φ.Π.Α
4
€ 5.351,12
€ 1.337,78 Each (In a Tray of 4) (Exc. Vat)Χωρίς Φ.Π.Α
€ 6.635,39
€ 1.658,847 Each (In a Tray of 4) Με Φ.Π.Α
4
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1875 W
Number of Elements per Chip
2
Width
57.95mm
Length
152mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Height
17mm
Χώρα Προέλευσης
Japan
Λεπτομέρειες Προϊόντος
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.