SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
P.O.A.
30
P.O.A.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products