Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
4.37mm
Χώρα Προέλευσης
China
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P.O.A.
1000
P.O.A.
1000
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
4.37mm
Χώρα Προέλευσης
China