STMicroelectronics STripFET II N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STD25NF10LT4
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Width
6.2mm
Typical Gate Charge @ Vgs
38 nC @ 5 V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 16,60
€ 3,32 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 20,58
€ 4,117 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
€ 16,60
€ 3,32 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 20,58
€ 4,117 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 5 - 5 | € 3,32 | € 16,60 |
| 10 - 20 | € 2,87 | € 14,35 |
| 25 - 95 | € 2,82 | € 14,10 |
| 100 - 495 | € 2,27 | € 11,35 |
| 500+ | € 2,11 | € 10,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Width
6.2mm
Typical Gate Charge @ Vgs
38 nC @ 5 V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products