STMicroelectronics STGW20NC60VD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 3,38
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 4,19
Μονάδας Με Φ.Π.Α
Standard
1
€ 3,38
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 4,19
Μονάδας Με Φ.Π.Α
Standard
1
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας |
---|---|
1 - 9 | € 3,38 |
10 - 99 | € 3,20 |
100 - 499 | € 3,15 |
500 - 999 | € 3,13 |
1000+ | € 3,08 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.