Vishay E Series N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC SIHG20N50E-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
500 V
Series
E Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
179 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
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€ 9,14
€ 4,57 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 11,33
€ 5,667 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
€ 9,14
€ 4,57 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 11,33
€ 5,667 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 2 - 18 | € 4,57 | € 9,14 |
| 20 - 98 | € 4,36 | € 8,72 |
| 100 - 198 | € 3,99 | € 7,98 |
| 200 - 498 | € 3,81 | € 7,62 |
| 500+ | € 3,63 | € 7,26 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
500 V
Series
E Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
179 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products