Τεχνικό φυλλάδιο
Προδιαγραφές
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Mounting Type
Through Hole
Brand
WinslowΧώρα Προέλευσης
United Kingdom
Λεπτομέρειες Προϊόντος
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 10,28
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 12,747
Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α
5
![sticker-730](https://cms.rsdelivers.com/repository-v1/Greece Label 3.jpg)
€ 10,28
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 12,747
Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α
5
![sticker-730](https://cms.rsdelivers.com/repository-v1/Greece Label 3.jpg)
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
5 - 120 | € 10,28 | € 51,40 |
125 - 370 | € 9,40 | € 47,00 |
375 - 995 | € 8,47 | € 42,35 |
1000 - 1995 | € 7,54 | € 37,70 |
2000+ | € 7,11 | € 35,55 |
Τεχνικό φυλλάδιο
Προδιαγραφές
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Mounting Type
Through Hole
Brand
WinslowΧώρα Προέλευσης
United Kingdom
Λεπτομέρειες Προϊόντος
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.