Infineon OptiMOS™ N-Channel MOSFET, 1.2 A, 100 V, 3-Pin SOT-223 BSP296NH6327XTSA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 440,00
€ 0,44 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 545,60
€ 0,546 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
1000
€ 440,00
€ 0,44 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 545,60
€ 0,546 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
1000
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Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products