Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.28 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 3.275,00
€ 1,31 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4.061,00
€ 1,624 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α
2500
€ 3.275,00
€ 1,31 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4.061,00
€ 1,624 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
2500
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.28 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products