Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0067 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si
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€ 12,50
€ 1,25 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 15,50
€ 1,55 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
€ 12,50
€ 1,25 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 15,50
€ 1,55 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
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Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0067 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products