Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.05mm
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.5mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.3V
Λεπτομέρειες Προϊόντος
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 5,80
€ 2,90 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,19
€ 3,596 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
€ 5,80
€ 2,90 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,19
€ 3,596 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 2 - 18 | € 2,90 | € 5,80 |
| 20 - 48 | € 2,58 | € 5,16 |
| 50 - 98 | € 2,45 | € 4,90 |
| 100 - 198 | € 2,30 | € 4,60 |
| 200+ | € 2,17 | € 4,34 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.05mm
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.5mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.3V
Λεπτομέρειες Προϊόντος
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products