Infineon SIPMOS® P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK SPD30P06PGBTMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
6.22mm
Transistor Material
Si
Forward Diode Voltage
1.7V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 16,70
€ 1,67 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 20,71
€ 2,071 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
€ 16,70
€ 1,67 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 20,71
€ 2,071 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
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| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 10 - 40 | € 1,67 | € 16,70 |
| 50 - 240 | € 1,59 | € 15,90 |
| 250 - 490 | € 1,36 | € 13,60 |
| 500 - 1240 | € 1,20 | € 12,00 |
| 1250+ | € 0,97 | € 9,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
6.22mm
Transistor Material
Si
Forward Diode Voltage
1.7V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products