IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P

Κωδικός Προϊόντος της RS: 194-473PΚατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXFN48N60P
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

25.42mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.23mm

Maximum Operating Temperature

+150 °C

Height

9.6mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 187,30

€ 37,46 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 232,25

€ 46,45 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P
Επιλέγξτε συσκευασία

€ 187,30

€ 37,46 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 232,25

€ 46,45 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

25.42mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.23mm

Maximum Operating Temperature

+150 °C

Height

9.6mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more