IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.44 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
32 nC @ 10 V
Width
4.83mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 33,00
€ 6,60 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 40,92
€ 8,184 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
€ 33,00
€ 6,60 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 40,92
€ 8,184 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 5 - 20 | € 6,60 | € 33,00 |
| 25 - 95 | € 5,12 | € 25,60 |
| 100 - 245 | € 4,91 | € 24,55 |
| 250 - 495 | € 4,25 | € 21,25 |
| 500+ | € 4,07 | € 20,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.44 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
32 nC @ 10 V
Width
4.83mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products