MagnaChip MPMC150B120RH, 7DM-2 , N-Channel Series IGBT Module, 150 A max, 1200 V, Panel Mount

Κωδικός Προϊόντος της RS: 784-6301Κατασκευαστής: MagnaChipΚωδικός Κατασκευαστή: MPMC150B120RH
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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

735 W

Package Type

7DM-2

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Switching Speed

70kHz

Transistor Configuration

Series

Dimensions

94 x 48 x 22mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

IGBT Modules, MagnaChip

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount
€ 216,08Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

P.O.A.

MagnaChip MPMC150B120RH, 7DM-2 , N-Channel Series IGBT Module, 150 A max, 1200 V, Panel Mount

P.O.A.

MagnaChip MPMC150B120RH, 7DM-2 , N-Channel Series IGBT Module, 150 A max, 1200 V, Panel Mount

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount
€ 216,08Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

735 W

Package Type

7DM-2

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Switching Speed

70kHz

Transistor Configuration

Series

Dimensions

94 x 48 x 22mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

IGBT Modules, MagnaChip

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount
€ 216,08Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α