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Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR

RS Stock No.: 170-5355Brand: NexperiaManufacturers Part No.: PMV16XNR
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

20 V

Series

PMV16XN

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

13.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

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Stock information temporarily unavailable.

€ 21.00

€ 0.42 Each (In a Pack of 50) (Exc. Vat)

€ 26.04

€ 0.521 Each (In a Pack of 50) (inc. VAT)

Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR
Select packaging type

€ 21.00

€ 0.42 Each (In a Pack of 50) (Exc. Vat)

€ 26.04

€ 0.521 Each (In a Pack of 50) (inc. VAT)

Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
50 - 200€ 0.42€ 21.00
250 - 450€ 0.21€ 10.50
500 - 1200€ 0.18€ 9.00
1250 - 2450€ 0.16€ 8.00
2500+€ 0.16€ 8.00

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

20 V

Series

PMV16XN

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

13.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more