onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-D26Z
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.19mm
Length
5.2mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
5.33mm
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 260,00
€ 0,13 Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 322,40
€ 0,161 Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α
2000
€ 260,00
€ 0,13 Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 322,40
€ 0,161 Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α
2000
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 2000 - 4000 | € 0,13 | € 260,00 |
| 6000 - 8000 | € 0,13 | € 260,00 |
| 10000+ | € 0,13 | € 260,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.19mm
Length
5.2mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
5.33mm
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products