onsemi PowerTrench P-Channel MOSFET, 51 A, 30 V, 8-Pin MicroFET 2 x 2 FDMC6679AZ

Κωδικός Προϊόντος της RS: 759-9522PΚατασκευαστής: onsemiΚωδικός Κατασκευαστή: FDMC6679AZ
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

30 V

Package Type

MicroFET 2 x 2

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

3.3mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

3.3mm

Height

0.75mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 10,70

€ 2,14 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 13,27

€ 2,654 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi PowerTrench P-Channel MOSFET, 51 A, 30 V, 8-Pin MicroFET 2 x 2 FDMC6679AZ
Επιλέγξτε συσκευασία

€ 10,70

€ 2,14 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 13,27

€ 2,654 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi PowerTrench P-Channel MOSFET, 51 A, 30 V, 8-Pin MicroFET 2 x 2 FDMC6679AZ

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

30 V

Package Type

MicroFET 2 x 2

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

3.3mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

3.3mm

Height

0.75mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more