
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK-2
Series
STH200
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
340W
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
1000
P.O.A.
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1000
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK-2
Series
STH200
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
340W
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.