STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10.5 A, 800 V, 3-Pin TO-247 STW12NK80Z
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Λεπτομέρειες Προϊόντος
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 116,70
€ 3,89 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 144,71
€ 4,824 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 116,70
€ 3,89 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 144,71
€ 4,824 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 30 - 60 | € 3,89 | € 116,70 |
| 90 - 480 | € 3,16 | € 94,80 |
| 510 - 960 | € 2,85 | € 85,50 |
| 990 - 4980 | € 2,45 | € 73,50 |
| 5010+ | € 2,40 | € 72,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Λεπτομέρειες Προϊόντος
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products