STMicroelectronics STripFET N-Channel MOSFET, 75 A, 200 V, 3-Pin TO-247 STW75NF20

Κωδικός Προϊόντος της RS: 168-7585Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STW75NF20
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

84 nC @ 10 V

Number of Elements per Chip

1

Width

5.15mm

Length

15.75mm

Minimum Operating Temperature

-50 °C

Height

20.15mm

Λεπτομέρειες Προϊόντος

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 163,80

€ 5,46 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 203,11

€ 6,77 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics STripFET N-Channel MOSFET, 75 A, 200 V, 3-Pin TO-247 STW75NF20

€ 163,80

€ 5,46 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 203,11

€ 6,77 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics STripFET N-Channel MOSFET, 75 A, 200 V, 3-Pin TO-247 STW75NF20
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

84 nC @ 10 V

Number of Elements per Chip

1

Width

5.15mm

Length

15.75mm

Minimum Operating Temperature

-50 °C

Height

20.15mm

Λεπτομέρειες Προϊόντος

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more