Toshiba N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 SSM3K335R
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
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€ 13.00
€ 0.26 Each (In a Pack of 50) (Exc. Vat)
€ 16.12
€ 0.322 Each (In a Pack of 50) (inc. VAT)
Standard
50
€ 13.00
€ 0.26 Each (In a Pack of 50) (Exc. Vat)
€ 16.12
€ 0.322 Each (In a Pack of 50) (inc. VAT)
Standard
50
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Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 100 | € 0.26 | € 13.00 |
| 150 - 450 | € 0.21 | € 10.50 |
| 500 - 950 | € 0.18 | € 9.00 |
| 1000+ | € 0.16 | € 8.00 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products