Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China
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€ 3,120.00
€ 1.04 Each (On a Reel of 3000) (Exc. Vat)
€ 3,868.80
€ 1.29 Each (On a Reel of 3000) (inc. VAT)
3000
€ 3,120.00
€ 1.04 Each (On a Reel of 3000) (Exc. Vat)
€ 3,868.80
€ 1.29 Each (On a Reel of 3000) (inc. VAT)
3000
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products