Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3

Κωδικός Προϊόντος της RS: 178-3687Κατασκευαστής: Vishay SiliconixΚωδικός Κατασκευαστή: SiR188DP-T1-RE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.6V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3.120,00

€ 1,04 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3.868,80

€ 1,29 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3

€ 3.120,00

€ 1,04 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3.868,80

€ 1,29 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.6V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more