Vishay N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3

Κωδικός Προϊόντος της RS: 165-7260Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SI1032R-T1-GE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

1

Width

0.86mm

Length

1.68mm

Typical Gate Charge @ Vgs

750 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 630,00

€ 0,21 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 781,20

€ 0,26 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3

€ 630,00

€ 0,21 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 781,20

€ 0,26 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

1

Width

0.86mm

Length

1.68mm

Typical Gate Charge @ Vgs

750 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more