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Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3

RS Stock No.: 768-9307PBrand: VishayManufacturers Part No.: SISA04DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.1 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

1.12mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 37.00

€ 1.85 Each (Supplied on a Reel) (Exc. Vat)

€ 45.88

€ 2.294 Each (Supplied on a Reel) (inc. VAT)

Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3
Select packaging type

€ 37.00

€ 1.85 Each (Supplied on a Reel) (Exc. Vat)

€ 45.88

€ 2.294 Each (Supplied on a Reel) (inc. VAT)

Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
20 - 98€ 1.85€ 3.70
100 - 198€ 1.70€ 3.40
200 - 498€ 1.62€ 3.24
500+€ 1.54€ 3.08

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.1 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

1.12mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more