Infineon N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.05mm
Length
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.3V
Height
0.5mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 7.392,00
€ 1,54 Μονάδας (Σε ένα καρούλι των 4800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9.166,08
€ 1,91 Μονάδας (Σε ένα καρούλι των 4800) Με Φ.Π.Α
4800
€ 7.392,00
€ 1,54 Μονάδας (Σε ένα καρούλι των 4800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9.166,08
€ 1,91 Μονάδας (Σε ένα καρούλι των 4800) Με Φ.Π.Α
4800
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.05mm
Length
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.3V
Height
0.5mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products