onsemi PowerTrench Dual N/P-Channel MOSFET, 3.5 A, 4.5 A, 60 V, 8-Pin SOIC FDS4559
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
3.5 A, 4.5 A
Maximum Drain Source Voltage
60 V
Series
PowerTrench
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ, 105 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V, 15 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Λεπτομέρειες Προϊόντος
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 1.375,00
€ 0,55 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.705,00
€ 0,682 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α
2500
€ 1.375,00
€ 0,55 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.705,00
€ 0,682 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α
2500
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
3.5 A, 4.5 A
Maximum Drain Source Voltage
60 V
Series
PowerTrench
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ, 105 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V, 15 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Λεπτομέρειες Προϊόντος
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products