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STMicroelectronics STripFET F7 N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STP130N6F7

Κωδικός Προϊόντος της RS: 906-4684Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP130N6F7
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

13.6 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

9.15mm

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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€ 9,80

€ 1,96 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,15

€ 2,43 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

STMicroelectronics STripFET F7 N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STP130N6F7
Επιλέγξτε συσκευασία

€ 9,80

€ 1,96 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,15

€ 2,43 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

STMicroelectronics STripFET F7 N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STP130N6F7
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

13.6 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

9.15mm

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more