Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 86,00
€ 1,72 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 106,64
€ 2,133 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 86,00
€ 1,72 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 106,64
€ 2,133 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 50 - 50 | € 1,72 | € 86,00 |
| 100 - 200 | € 1,49 | € 74,50 |
| 250+ | € 1,41 | € 70,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products