Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.1 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
1.12mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 37.00
€ 1.85 Each (Supplied on a Reel) (Exc. Vat)
€ 45.88
€ 2.294 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
20
€ 37.00
€ 1.85 Each (Supplied on a Reel) (Exc. Vat)
€ 45.88
€ 2.294 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
20 - 98 | € 1.85 | € 3.70 |
100 - 198 | € 1.70 | € 3.40 |
200 - 498 | € 1.62 | € 3.24 |
500+ | € 1.54 | € 3.08 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.1 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
1.12mm
Minimum Operating Temperature
-55 °C
Product details