Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1

Κωδικός Προϊόντος της RS: 906-4381Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSC010N04LSATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

95 nC @ 10V

Maximum Operating Temperature

+150 °C

Width

5.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.1mm

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 24,30

€ 2,43 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 30,13

€ 3,013 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Επιλέγξτε συσκευασία

€ 24,30

€ 2,43 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 30,13

€ 3,013 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
10 - 40€ 2,43€ 24,30
50 - 90€ 2,35€ 23,50
100 - 240€ 2,27€ 22,70
250 - 490€ 2,22€ 22,20
500+€ 2,09€ 20,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

95 nC @ 10V

Maximum Operating Temperature

+150 °C

Width

5.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.1mm

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more