Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

Κωδικός Προϊόντος της RS: 166-0610Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: BSH203,215
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 540,00

€ 0,18 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 669,60

€ 0,223 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

€ 540,00

€ 0,18 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 669,60

€ 0,223 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more