Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Length
10.4mm
Height
15.8mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 752,63
€ 752,63 1 Ράγα των 30 (Exc. Vat)Χωρίς Φ.Π.Α
€ 933,26
€ 933,26 1 Ράγα των 30 Με Φ.Π.Α
1
€ 752,63
€ 752,63 1 Ράγα των 30 (Exc. Vat)Χωρίς Φ.Π.Α
€ 933,26
€ 933,26 1 Ράγα των 30 Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Length
10.4mm
Height
15.8mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
