Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
50 W
Number of Transistors
1
Package Type
TO-220FP
Pin Count
3
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
5
P.O.A.
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
50 W
Number of Transistors
1
Package Type
TO-220FP
Pin Count
3
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
