Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B

Κωδικός Προϊόντος της RS: 122-1467Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMN2300UFB4-7B
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

0.65mm

Length

1.05mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.35mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1.000,00

€ 0,10 Μονάδας (Σε ένα καρούλι των 10000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.240,00

€ 0,124 Μονάδας (Σε ένα καρούλι των 10000) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B

€ 1.000,00

€ 0,10 Μονάδας (Σε ένα καρούλι των 10000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.240,00

€ 0,124 Μονάδας (Σε ένα καρούλι των 10000) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

0.65mm

Length

1.05mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.35mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more