Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS™ 5
Package Type
SuperSO8 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Number of Elements per Chip
1
Width
6.35mm
Length
5.49mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.62V
Height
1.1mm
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 69,25
€ 2,77 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 85,87
€ 3,435 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
25
€ 69,25
€ 2,77 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 85,87
€ 3,435 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
25
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
---|---|---|
25 - 45 | € 2,77 | € 13,85 |
50 - 120 | € 2,64 | € 13,20 |
125 - 245 | € 2,51 | € 12,55 |
250+ | € 2,35 | € 11,75 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS™ 5
Package Type
SuperSO8 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Number of Elements per Chip
1
Width
6.35mm
Length
5.49mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.62V
Height
1.1mm
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.