Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 BSS127H6327XTSA2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
2.9mm
Typical Gate Charge @ Vgs
0.65 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.3mm
Height
1mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 390,00
€ 0,13 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 483,60
€ 0,161 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
3000
€ 390,00
€ 0,13 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 483,60
€ 0,161 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
3000
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 3000 - 3000 | € 0,13 | € 390,00 |
| 6000 - 12000 | € 0,13 | € 390,00 |
| 15000+ | € 0,13 | € 390,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
2.9mm
Typical Gate Charge @ Vgs
0.65 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.3mm
Height
1mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products