Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.47mm
Length
4.97mm
Maximum Operating Supply Voltage
3.6 V
Width
3.98mm
Height
1.47mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Λεπτομέρειες Προϊόντος
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 20,98
€ 10,49 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 26,02
€ 13,008 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
€ 20,98
€ 10,49 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 26,02
€ 13,008 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
2 - 8 | € 10,49 | € 20,98 |
10 - 18 | € 8,46 | € 16,92 |
20 - 98 | € 8,38 | € 16,76 |
100 - 498 | € 8,27 | € 16,54 |
500+ | € 8,17 | € 16,34 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.47mm
Length
4.97mm
Maximum Operating Supply Voltage
3.6 V
Width
3.98mm
Height
1.47mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Λεπτομέρειες Προϊόντος
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.