Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

Κωδικός Προϊόντος της RS: 284-720Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IMT65R039M1HXUMA1
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 19,45

€ 19,45 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 24,12

€ 24,12 Μονάδας Με Φ.Π.Α

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
Επιλέγξτε συσκευασία

€ 19,45

€ 19,45 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 24,12

€ 24,12 Μονάδας Με Φ.Π.Α

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 19,45
10 - 99€ 17,75
100+€ 16,63

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more