Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 2.460,00
€ 1,23 Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3.050,40
€ 1,525 Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α
2000
€ 2.460,00
€ 1,23 Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3.050,40
€ 1,525 Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α
2000
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Ideate. Create. Collaborate
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- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products