Infineon HEXFET N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 IRF5801TRPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Series
HEXFET
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
3.9 nC @ 10 V
Width
1.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 4,40
€ 0,44 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 5,46
€ 0,546 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
€ 4,40
€ 0,44 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 5,46
€ 0,546 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Series
HEXFET
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
3.9 nC @ 10 V
Width
1.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products