Infineon HEXFET N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB IRFB3607PBF

Κωδικός Προϊόντος της RS: 688-6923Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRFB3607PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

56 nC @ 10 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+175 °C

Height

9.02mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 5,75

€ 1,15 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7,13

€ 1,426 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Infineon HEXFET N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB IRFB3607PBF
Επιλέγξτε συσκευασία

€ 5,75

€ 1,15 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7,13

€ 1,426 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Infineon HEXFET N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB IRFB3607PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 45€ 1,15€ 5,75
50 - 120€ 0,78€ 3,90
125 - 245€ 0,73€ 3,65
250 - 495€ 0,68€ 3,40
500+€ 0,65€ 3,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

56 nC @ 10 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+175 °C

Height

9.02mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more