Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-247AC IRFP4110PBF

Κωδικός Προϊόντος της RS: 688-6995PΚατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRFP4110PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+175 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 118,00

€ 5,90 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 146,32

€ 7,316 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-247AC IRFP4110PBF
Επιλέγξτε συσκευασία

€ 118,00

€ 5,90 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 146,32

€ 7,316 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-247AC IRFP4110PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
20 - 48€ 5,90€ 11,80
50 - 98€ 5,59€ 11,18
100 - 198€ 5,33€ 10,66
200+€ 4,99€ 9,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+175 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more