Infineon HEXFET P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF

Κωδικός Προϊόντος της RS: 784-0325PΚατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRLML5203TRPBF
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Taiwan Semi P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 TSM2307CX RFG
€ 0,583Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 37,00

€ 0,37 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 45,88

€ 0,459 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Infineon HEXFET P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF
Επιλέγξτε συσκευασία

€ 37,00

€ 0,37 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 45,88

€ 0,459 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Infineon HEXFET P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
100 - 240€ 0,37€ 3,70
250 - 490€ 0,23€ 2,30
500 - 990€ 0,21€ 2,10
1000+€ 0,18€ 1,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Taiwan Semi P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 TSM2307CX RFG
€ 0,583Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Taiwan Semi P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 TSM2307CX RFG
€ 0,583Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α