IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
430 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
625 W
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
5 → 30kHz
Transistor Configuration
Single
Dimensions
16.1 x 5.2 x 21.3mm
Maximum Operating Temperature
+175 °C
Energy Rating
5.2mJ
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Philippines
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
30
P.O.A.
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
30
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
430 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
625 W
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
5 → 30kHz
Transistor Configuration
Single
Dimensions
16.1 x 5.2 x 21.3mm
Maximum Operating Temperature
+175 °C
Energy Rating
5.2mJ
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Philippines
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products